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Switching Diodes
MA27111
Silicon epitaxial planar type
Unit: mm
For high-speed switching circuits Features
* High-density mounting is possible * Short reverse recovery time trr * Small terminal capacitance Ct
0.27+0.05 -0.02 2 1.000.05 1.400.05
0.13+0.05 -0.02
1 0.600.05 0.15 min.
Absolute Maximum Ratings Ta = 25C
Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature Note) *: t = 1 s Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 -55 to +150 Unit V V mA mA mA C C
5
5
0 to 0.01
1: Anode 2: Cathode SSSMini2-F2 Package
Marking Symbol: S
Electrical Characteristics Ta = 25C 3C
Parameter Forward voltage Reverse voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF VR IR Ct trr IR = 100 A VR = 75 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 IR , RL = 100 0.6 Conditions IF = 100 mA 80 100 2.0 3 nA pF ns Min Typ 0.95 Max 1.20 Unit V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 10 MHz. 3. *: trr measurement circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 IR IF = 10 mA VR = 6 V RL = 100 Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Wave Form Analyzer (SAS-8130) Ri = 50
90% tp = 2 s tr = 0.35 ns = 0.05
0.15 max.
0.520.03
0.15 min.
Publication date: November 2003
SKF00066BED
1
MA27111
IF V F
103
I R VR
105
1.6
VF T a
102
Forward current IF (mA)
100C 10 25C -20C 1
103
100C
Forward voltage VF (V)
Reverse current IR (nA)
Ta = 150C
104
Ta = 150C
1.2
IF = 100 mA 0.8 10 mA 0.4 3 mA
102 25C 10
10-1
10-2
1
0 0.2 0.4 0.6 0.8 1.0 1.2
0
20
40
60
80
100
120
0 -40
0
40
80
120
160
200
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
IR T a
105 VR = 75 V 1.2
Ct VR
f = 1 MHz Ta = 25C 6V
103
IF(surge) tW
Ta = 25C IF(surge) tW Non repetitive
Terminal capacitance Ct (pF)
104
35 V
Forward surge current IF(surge) (A)
0 20 40 60 80 100 120
1.0
Reverse current IR (nA)
102
0.8
103
0.6
10
102
0.4
10
1
0.2
1 -40
0 0 40 80 120 160 200
10-1
10-1
1
10
Ambient temperature Ta (C)
Reverse voltage VR (V)
Pulse width tW (ms)
2
SKF00066BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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